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TK10A80E,S4X

TK10A80E,S4X

For Reference Only

Part Number TK10A80E,S4X
PNEDA Part # TK10A80E-S4X
Description MOSFET N-CH 800V TO220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,264
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK10A80E Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK10A80E,S4X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK10A80E Specifications

ManufacturerToshiba Semiconductor and Storage
Seriesπ-MOSVIII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 25V
FET Feature-
Power Dissipation (Max)50W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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