Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TK11A55D(STA4,Q,M)

TK11A55D(STA4,Q,M)

For Reference Only

Part Number TK11A55D(STA4,Q,M)
PNEDA Part # TK11A55D-STA4-Q-M
Description MOSFET N-CH 550V 11A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,796
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 18 - Jun 23 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK11A55D(STA4 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK11A55D(STA4,Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TK11A55D(STA4,Q,M) Datasheet
  • where to find TK11A55D(STA4,Q,M)
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TK11A55D(STA4,Q,M)
  • TK11A55D(STA4,Q,M) PDF Datasheet
  • TK11A55D(STA4,Q,M) Stock

  • TK11A55D(STA4,Q,M) Pinout
  • Datasheet TK11A55D(STA4,Q,M)
  • TK11A55D(STA4,Q,M) Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TK11A55D(STA4,Q,M) Price
  • TK11A55D(STA4,Q,M) Distributor

TK11A55D(STA4 Specifications

ManufacturerToshiba Semiconductor and Storage
Seriesπ-MOSVII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs630mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 25V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

The Products You May Be Interested In

SPD30N03S2L10T

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

10mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs

41.8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1550pF @ 25V

FET Feature

-

Power Dissipation (Max)

100W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

AO3421E

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

95mOhm @ 3A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

215pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.4W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3L

Package / Case

TO-236-3, SC-59, SOT-23-3

IXFV52N30P

IXYS

Manufacturer

IXYS

Series

PolarHT™ HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

66mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

110nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3490pF @ 25V

FET Feature

-

Power Dissipation (Max)

400W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS220

Package / Case

TO-220-3, Short Tab

DMP2066LSN-7

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

40mOhm @ 4.6A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

10.1nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

820pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SC-59-3

Package / Case

TO-236-3, SC-59, SOT-23-3

IRFSL4410ZPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

97A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

9mOhm @ 58A, 10V

Vgs(th) (Max) @ Id

4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4820pF @ 50V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

Recently Sold

UVR1E101MED1TA

UVR1E101MED1TA

Nichicon

CAP ALUM 100UF 20% 25V RADIAL

ADM3490ARZ

ADM3490ARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

TCS3200D-TR

TCS3200D-TR

ams

IC COLOR SENSOR LIGHT-FREQ 8SOIC

ES1B-E3/61T

ES1B-E3/61T

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214AC

TL1014BF160QG

TL1014BF160QG

E-Switch

SWITCH TACTILE SPST-NO 0.05A 12V

150040RS73240

150040RS73240

Wurth Electronics

LED RED CLEAR 0402 SMD

MAX6675ISA+T

MAX6675ISA+T

Maxim Integrated

IC THERMOCOUP TO DGTL 8-SOIC

MAX17048G+T10

MAX17048G+T10

Maxim Integrated

IC FUEL GAUGE LI-ION 1CELL 8TDFN

ST62T65CM6

ST62T65CM6

STMicroelectronics

IC MCU 8BIT 3.8KB OTP 28SOIC

MAX3002EUP+

MAX3002EUP+

Maxim Integrated

IC TRNSLTR BIDIRECTIONAL 20TSSOP

VS-VSKU91/04

VS-VSKU91/04

Vishay Semiconductor Diodes Division

MODULE THYRISTOR 95A ADD-A-PAK

PT61020EL

PT61020EL

Bourns

PULSE XFMR 1CT:1 350UH