TK12E60W,S1VX
For Reference Only
| Part Number | TK12E60W,S1VX |
| PNEDA Part # | TK12E60W-S1VX |
| Description | MOSFET N CH 600V 11.5A TO-220 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 7,200 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 24 - Jun 29 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TK12E60W Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TK12E60W,S1VX |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TK12E60W,S1VX Datasheet
- where to find TK12E60W,S1VX
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TK12E60W,S1VX
- TK12E60W,S1VX PDF Datasheet
- TK12E60W,S1VX Stock
- TK12E60W,S1VX Pinout
- Datasheet TK12E60W,S1VX
- TK12E60W,S1VX Supplier
- Toshiba Semiconductor and Storage Distributor
- TK12E60W,S1VX Price
- TK12E60W,S1VX Distributor
TK12E60W Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 890pF @ 300V |
| FET Feature | Super Junction |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220 |
| Package / Case | TO-220-3 |
The Products You May Be Interested In
|
Manufacturer Vishay Siliconix Series TrenchFET® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 8V Current - Continuous Drain (Id) @ 25°C 5.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id 750mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 42nC @ 4.5V Vgs (Max) ±5V Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) 1.1W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 6-TSOP Package / Case SOT-23-6 Thin, TSOT-23-6 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V FET Feature - Power Dissipation (Max) 294W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4.5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2270pF @ 25V FET Feature - Power Dissipation (Max) 500W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263 Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer Microsemi Corporation Series POWER MOS 8™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 60A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 110mOhm @ 28A, 10V Vgs(th) (Max) @ Id 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 11300pF @ 25V FET Feature - Power Dissipation (Max) 1040W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-264 [L] Package / Case TO-264-3, TO-264AA |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 300mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 21.6Ohm @ 150mA, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 200pF @ 25V FET Feature - Power Dissipation (Max) 2.1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package SOT-223 Package / Case TO-261-4, TO-261AA |
