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TK12E80W,S1X

TK12E80W,S1X

For Reference Only

Part Number TK12E80W,S1X
PNEDA Part # TK12E80W-S1X
Description MOSFET N-CH 800V 11.5A TO220
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 9,324
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK12E80W Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK12E80W,S1X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK12E80W Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25°C11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs450mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs23nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 300V
FET Feature-
Power Dissipation (Max)165W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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