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TK16A55D(STA4,Q,M)

TK16A55D(STA4,Q,M)

For Reference Only

Part Number TK16A55D(STA4,Q,M)
PNEDA Part # TK16A55D-STA4-Q-M
Description MOSFET N-CH 550V 16A TO-220SIS
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,778
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK16A55D(STA4 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK16A55D(STA4,Q,M)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TK16A55D(STA4, TK16A55D(STA4 Datasheet (Total Pages: 63, Size: 1,617.96 KB)
PDFTPCP8203(TE85L Datasheet Cover
TPCP8203(TE85L Datasheet Page 2 TPCP8203(TE85L Datasheet Page 3 TPCP8203(TE85L Datasheet Page 4 TPCP8203(TE85L Datasheet Page 5 TPCP8203(TE85L Datasheet Page 6 TPCP8203(TE85L Datasheet Page 7 TPCP8203(TE85L Datasheet Page 8 TPCP8203(TE85L Datasheet Page 9 TPCP8203(TE85L Datasheet Page 10 TPCP8203(TE85L Datasheet Page 11

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TK16A55D(STA4 Specifications

ManufacturerToshiba Semiconductor and Storage
Seriesπ-MOSVII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)550V
Current - Continuous Drain (Id) @ 25°C16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs330mOhm @ 8A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs45nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
FET Feature-
Power Dissipation (Max)-
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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