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TK16J60W,S1VQ

TK16J60W,S1VQ

For Reference Only

Part Number TK16J60W,S1VQ
PNEDA Part # TK16J60W-S1VQ
Description MOSFET N CH 600V 15.8A TO-3P(N)
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,214
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK16J60W Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK16J60W,S1VQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK16J60W Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C15.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs190mOhm @ 7.9A, 10V
Vgs(th) (Max) @ Id3.7V @ 790µA
Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1350pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)130W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3P(N)
Package / CaseTO-3P-3, SC-65-3

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