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TK1K2A60F,S4X

TK1K2A60F,S4X

For Reference Only

Part Number TK1K2A60F,S4X
PNEDA Part # TK1K2A60F-S4X
Description PB-F POWER MOSFET TRANSISTOR TO-
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 20,988
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 6 - May 11 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK1K2A60F Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK1K2A60F,S4X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK1K2A60F Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIX
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4V @ 630µA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds740pF @ 300V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-220SIS
Package / CaseTO-220-3 Full Pack

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