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TK32E12N1,S1X

TK32E12N1,S1X

For Reference Only

Part Number TK32E12N1,S1X
PNEDA Part # TK32E12N1-S1X
Description MOSFET N CH 120V 60A TO-220
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,656
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK32E12N1 Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK32E12N1,S1X
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK32E12N1 Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)120V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs13.8mOhm @ 16A, 10V
Vgs(th) (Max) @ Id4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2000pF @ 60V
FET Feature-
Power Dissipation (Max)98W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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