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TK39N60W,S1VF

TK39N60W,S1VF

For Reference Only

Part Number TK39N60W,S1VF
PNEDA Part # TK39N60W-S1VF
Description MOSFET N CH 600V 38.8A TO247
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,832
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 14 - May 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK39N60W Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK39N60W,S1VF
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK39N60W Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesDTMOSIV
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C38.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 19.4A, 10V
Vgs(th) (Max) @ Id3.7V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds4100pF @ 300V
FET FeatureSuper Junction
Power Dissipation (Max)270W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247
Package / CaseTO-247-3

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