TK4A50D(STA4,Q,M)
For Reference Only
| Part Number | TK4A50D(STA4,Q,M) |
| PNEDA Part # | TK4A50D-STA4-Q-M |
| Description | MOSFET N-CH 500V 4A TO-220SIS |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 7,974 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 12 - May 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TK4A50D(STA4 Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TK4A50D(STA4,Q,M) |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TK4A50D(STA4,Q,M) Datasheet
- where to find TK4A50D(STA4,Q,M)
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TK4A50D(STA4,Q,M)
- TK4A50D(STA4,Q,M) PDF Datasheet
- TK4A50D(STA4,Q,M) Stock
- TK4A50D(STA4,Q,M) Pinout
- Datasheet TK4A50D(STA4,Q,M)
- TK4A50D(STA4,Q,M) Supplier
- Toshiba Semiconductor and Storage Distributor
- TK4A50D(STA4,Q,M) Price
- TK4A50D(STA4,Q,M) Distributor
TK4A50D(STA4 Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | π-MOSVII |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 30W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220SIS |
| Package / Case | TO-220-3 Full Pack |
The Products You May Be Interested In
|
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 11A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.9mOhm @ 11A, 10V Vgs(th) (Max) @ Id 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs 9.3nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 760pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 7V Rds On (Max) @ Id, Vgs 16mOhm @ 29A, 7V Vgs(th) (Max) @ Id 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 43nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 15V FET Feature - Power Dissipation (Max) 69W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer STMicroelectronics Series MDmesh™ II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 21A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 2400pF @ 50V FET Feature - Power Dissipation (Max) 160W (Tc) Operating Temperature 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer Taiwan Semiconductor Corporation Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20.5nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1040pF @ 100V FET Feature - Power Dissipation (Max) 125W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ITO-220AB Package / Case TO-220-3 Full Pack, Isolated Tab |
Manufacturer Renesas Electronics America Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 48mOhm @ 12.5A, 10V Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 25V FET Feature - Power Dissipation (Max) 65W (Tc) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package WPAK(3F) (5x6) Package / Case 8-PowerVDFN |
