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TK90S06N1L,LQ

TK90S06N1L,LQ

For Reference Only

Part Number TK90S06N1L,LQ
PNEDA Part # TK90S06N1L-LQ
Description MOSFET N-CH 60V 90A DPAK
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,814
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 31 - Jun 5 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TK90S06N1L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTK90S06N1L,LQ
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TK90S06N1L Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C90A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.3mOhm @ 45A, 10V
Vgs(th) (Max) @ Id2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5400pF @ 10V
FET Feature-
Power Dissipation (Max)157W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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