TN0110N3-G-P002
For Reference Only
| Part Number | TN0110N3-G-P002 |
| PNEDA Part # | TN0110N3-G-P002 |
| Description | MOSFET N-CH 100V 350MA TO92-3 |
| Manufacturer | Microchip Technology |
| Unit Price | Request a Quote |
| In Stock | 2,070 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 5 - May 10 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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TN0110N3-G-P002 Resources
| Brand | Microchip Technology |
| ECAD Module |
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| Mfr. Part Number | TN0110N3-G-P002 |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
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TN0110N3-G-P002 Specifications
| Manufacturer | Microchip Technology |
| Series | - |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 350mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-92-3 |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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