TP0610T-G
For Reference Only
| Part Number | TP0610T-G |
| PNEDA Part # | TP0610T-G |
| Description | MOSFET P-CH 60V 0.12A SOT23-3 |
| Manufacturer | Microchip Technology |
| Unit Price | Request a Quote |
| In Stock | 24,180 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TP0610T-G Resources
| Brand | Microchip Technology |
| ECAD Module |
|
| Mfr. Part Number | TP0610T-G |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TP0610T-G Datasheet
- where to find TP0610T-G
- Microchip Technology
- Microchip Technology TP0610T-G
- TP0610T-G PDF Datasheet
- TP0610T-G Stock
- TP0610T-G Pinout
- Datasheet TP0610T-G
- TP0610T-G Supplier
- Microchip Technology Distributor
- TP0610T-G Price
- TP0610T-G Distributor
TP0610T-G Specifications
| Manufacturer | Microchip Technology |
| Series | - |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 200mA, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-236AB (SOT23) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
The Products You May Be Interested In
|
Manufacturer ON Semiconductor Series PowerTrench® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 13A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 9mOhm @ 13A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 3939pF @ 15V FET Feature - Power Dissipation (Max) 2.5W (Ta) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOIC Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer STMicroelectronics Series STripFET™ V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 20mOhm @ 13.5A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 5V Vgs (Max) ±22V Input Capacitance (Ciss) (Max) @ Vds 475pF @ 25V FET Feature - Power Dissipation (Max) 45W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Manufacturer NXP USA Inc. Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 70.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 153nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9900pF @ 50V FET Feature - Power Dissipation (Max) 63.8W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack, Isolated Tab |
Manufacturer ON Semiconductor Series * FET Type - Technology - Drain to Source Voltage (Vdss) - Current - Continuous Drain (Id) @ 25°C - Drive Voltage (Max Rds On, Min Rds On) - Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Vgs (Max) - Input Capacitance (Ciss) (Max) @ Vds - FET Feature - Power Dissipation (Max) - Operating Temperature - Mounting Type - Supplier Device Package - Package / Case - |
Manufacturer ON Semiconductor Series UniFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 2135pF @ 25V FET Feature - Power Dissipation (Max) 235W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
