TPC6010-H(TE85L,FM
For Reference Only
| Part Number | TPC6010-H(TE85L,FM |
| PNEDA Part # | TPC6010-H-TE85L-FM |
| Description | MOSFET N-CH 60V 6.1A VS6 |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 3,240 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TPC6010-H(TE85L Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TPC6010-H(TE85L,FM |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TPC6010-H(TE85L,FM Datasheet
- where to find TPC6010-H(TE85L,FM
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TPC6010-H(TE85L,FM
- TPC6010-H(TE85L,FM PDF Datasheet
- TPC6010-H(TE85L,FM Stock
- TPC6010-H(TE85L,FM Pinout
- Datasheet TPC6010-H(TE85L,FM
- TPC6010-H(TE85L,FM Supplier
- Toshiba Semiconductor and Storage Distributor
- TPC6010-H(TE85L,FM Price
- TPC6010-H(TE85L,FM Distributor
TPC6010-H(TE85L Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVI-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3.1A, 10V |
| Vgs(th) (Max) @ Id | 2.3V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 830pF @ 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | VS-6 (2.9x2.8) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
The Products You May Be Interested In
|
Manufacturer Rohm Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V Rds On (Max) @ Id, Vgs 25.8mOhm @ 5.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 15.2nC @ 4.5V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 10V FET Feature - Power Dissipation (Max) 1W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TUMT6 Package / Case 6-SMD, Flat Leads |
Manufacturer Infineon Technologies Series SIPMOS® FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 620mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 620mA, 10V Vgs(th) (Max) @ Id 2V @ 160µA Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 176pF @ 25V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SC-59 Package / Case TO-236-3, SC-59, SOT-23-3 |
Manufacturer IXYS Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 1.6A (Tj) Drive Voltage (Max Rds On, Min Rds On) 0V Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V Vgs(th) (Max) @ Id 4.5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 645pF @ 10V FET Feature Depletion Mode Power Dissipation (Max) 100W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package TO-263HV Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 80V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 11mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4800pF @ 25V FET Feature - Power Dissipation (Max) 230W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 100A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 6.5mOhm @ 15A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 4.5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2980pF @ 10V FET Feature - Power Dissipation (Max) 2.5W (Ta), 120W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package IPAK (TO-251) Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
