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TPC8031-H(TE12LQM)

TPC8031-H(TE12LQM)

For Reference Only

Part Number TPC8031-H(TE12LQM)
PNEDA Part # TPC8031-H-TE12LQM
Description MOSFET N-CH 30V 11A SOP8 2-6J1B
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,508
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPC8031-H(TE12LQM) Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPC8031-H(TE12LQM)
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPC8031-H(TE12LQM), TPC8031-H(TE12LQM) Datasheet (Total Pages: 63, Size: 1,617.96 KB)
PDFTPCP8203(TE85L Datasheet Cover
TPCP8203(TE85L Datasheet Page 2 TPCP8203(TE85L Datasheet Page 3 TPCP8203(TE85L Datasheet Page 4 TPCP8203(TE85L Datasheet Page 5 TPCP8203(TE85L Datasheet Page 6 TPCP8203(TE85L Datasheet Page 7 TPCP8203(TE85L Datasheet Page 8 TPCP8203(TE85L Datasheet Page 9 TPCP8203(TE85L Datasheet Page 10 TPCP8203(TE85L Datasheet Page 11

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TPC8031-H(TE12LQM) Specifications

ManufacturerToshiba Semiconductor and Storage
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C11A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs13.3mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds2150pF @ 10V
FET Feature-
Power Dissipation (Max)-
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP (5.5x6.0)
Package / Case8-SOIC (0.173", 4.40mm Width)

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