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TPC8062-H,LQ(CM

TPC8062-H,LQ(CM

For Reference Only

Part Number TPC8062-H,LQ(CM
PNEDA Part # TPC8062-H-LQ-CM
Description MOSFET N-CH 30V 18A 8SOP
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 4,158
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPC8062-H Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPC8062-H,LQ(CM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TPC8062-H Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 9A, 10V
Vgs(th) (Max) @ Id2.3V @ 300µA
Gate Charge (Qg) (Max) @ Vgs34nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package / Case8-SOIC (0.173", 4.40mm Width)

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