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TPCA8011-H(TE12LQM

TPCA8011-H(TE12LQM

For Reference Only

Part Number TPCA8011-H(TE12LQM
PNEDA Part # TPCA8011-H-TE12LQM
Description MOSFET N-CH 20V 40A SOP-8 ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,232
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 3 - May 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCA8011-H(TE12LQM Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCA8011-H(TE12LQM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCA8011-H(TE12LQM, TPCA8011-H(TE12LQM Datasheet (Total Pages: 7, Size: 178.15 KB)
PDFTPCA8011-H(TE12LQM Datasheet Cover
TPCA8011-H(TE12LQM Datasheet Page 2 TPCA8011-H(TE12LQM Datasheet Page 3 TPCA8011-H(TE12LQM Datasheet Page 4 TPCA8011-H(TE12LQM Datasheet Page 5 TPCA8011-H(TE12LQM Datasheet Page 6 TPCA8011-H(TE12LQM Datasheet Page 7

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TPCA8011-H(TE12LQM Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C40A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id1.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2900pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 45W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

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