Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPCA8055-H,LQ(M

TPCA8055-H,LQ(M

For Reference Only

Part Number TPCA8055-H,LQ(M
PNEDA Part # TPCA8055-H-LQ-M
Description MOSFET N-CH 30V 56A 8SOP-ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 7,866
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 20 - May 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCA8055-H Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCA8055-H,LQ(M
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPCA8055-H,LQ(M Datasheet
  • where to find TPCA8055-H,LQ(M
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPCA8055-H,LQ(M
  • TPCA8055-H,LQ(M PDF Datasheet
  • TPCA8055-H,LQ(M Stock

  • TPCA8055-H,LQ(M Pinout
  • Datasheet TPCA8055-H,LQ(M
  • TPCA8055-H,LQ(M Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPCA8055-H,LQ(M Price
  • TPCA8055-H,LQ(M Distributor

TPCA8055-H Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C56A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.9mOhm @ 28A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs91nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7700pF @ 10V
FET Feature-
Power Dissipation (Max)1.6W (Ta), 70W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP Advance (5x5)
Package / Case8-PowerVDFN

The Products You May Be Interested In

ZXMP10A16KTC

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

235mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

16.5nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

717pF @ 50V

FET Feature

-

Power Dissipation (Max)

2.15W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252-3

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

SI3434DV-T1-GE3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

4.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

34mOhm @ 6.1A, 4.5V

Vgs(th) (Max) @ Id

600mV @ 1mA (Min)

Gate Charge (Qg) (Max) @ Vgs

12nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

1.14W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

6-TSOP

Package / Case

SOT-23-6 Thin, TSOT-23-6

GP1M011A050H

Global Power Technologies Group

Manufacturer

Global Power Technologies Group

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

670mOhm @ 5.5A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

28nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1423pF @ 25V

FET Feature

-

Power Dissipation (Max)

158W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

IRFB7530PBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®, StrongIRFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id

3.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

411nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

13703pF @ 25V

FET Feature

-

Power Dissipation (Max)

375W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

BSC220N20NSFDATMA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

52A

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

22mOhm @ 52A, 10V

Vgs(th) (Max) @ Id

4V @ 137µA

Gate Charge (Qg) (Max) @ Vgs

43nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3680pF @ 100V

FET Feature

-

Power Dissipation (Max)

214W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TSON-8-3

Package / Case

8-PowerTDFN

Recently Sold

MMSD4148T1G

MMSD4148T1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SOD123

STM32F091VBT6

STM32F091VBT6

STMicroelectronics

IC MCU 32BIT 128KB FLASH 100LQFP

219-2MSTR

219-2MSTR

CTS Electrocomponents

SWITCH SLIDE DIP SPST 100MA 20V

ADM3490ARZ

ADM3490ARZ

Analog Devices

IC TRANSCEIVER FULL 1/1 8SOIC

NDT3055L

NDT3055L

ON Semiconductor

MOSFET N-CH 60V 4A SOT-223-4

EP4CE6E22C8N

EP4CE6E22C8N

Intel

IC FPGA 91 I/O 144EQFP

SMBJ58A

SMBJ58A

Taiwan Semiconductor Corporation

TVS DIODE 58V 93.6V DO214AA

LM2904AQTH-13

LM2904AQTH-13

Diodes Incorporated

IC OPAMP GP 2 CIRCUIT 8TSSOP

EEE-FK1J220P

EEE-FK1J220P

Panasonic Electronic Components

CAP ALUM 22UF 20% 63V SMD

IS42S16160G-7BLI-TR

IS42S16160G-7BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 54TFBGA

7447709330

7447709330

Wurth Electronics

FIXED IND 33UH 4.2A 45 MOHM SMD

AD780ARZ

AD780ARZ

Analog Devices

IC VREF SERIES/SHUNT PROG 8SOIC