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TPCC8002-H(TE12L,Q

TPCC8002-H(TE12L,Q

For Reference Only

Part Number TPCC8002-H(TE12L,Q
PNEDA Part # TPCC8002-H-TE12L-Q
Description MOSFET N-CH 30V 22A 8TSON
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 5,580
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jul 14 - Jul 19 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCC8002-H(TE12L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCC8002-H(TE12L,Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCC8002-H(TE12L, TPCC8002-H(TE12L Datasheet (Total Pages: 7, Size: 179.43 KB)
PDFTPCC8002-H(TE12LQM Datasheet Cover
TPCC8002-H(TE12LQM Datasheet Page 2 TPCC8002-H(TE12LQM Datasheet Page 3 TPCC8002-H(TE12LQM Datasheet Page 4 TPCC8002-H(TE12LQM Datasheet Page 5 TPCC8002-H(TE12LQM Datasheet Page 6 TPCC8002-H(TE12LQM Datasheet Page 7

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TPCC8002-H(TE12L Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSV-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta), 30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

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