Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPCC8002-H(TE12LQM

TPCC8002-H(TE12LQM

For Reference Only

Part Number TPCC8002-H(TE12LQM
PNEDA Part # TPCC8002-H-TE12LQM
Description MOSFET N-CH 30V 22A 8TSON
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 2,100
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 22 - May 27 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCC8002-H(TE12LQM Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCC8002-H(TE12LQM
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCC8002-H(TE12LQM, TPCC8002-H(TE12LQM Datasheet (Total Pages: 7, Size: 179.43 KB)
PDFTPCC8002-H(TE12LQM Datasheet Cover
TPCC8002-H(TE12LQM Datasheet Page 2 TPCC8002-H(TE12LQM Datasheet Page 3 TPCC8002-H(TE12LQM Datasheet Page 4 TPCC8002-H(TE12LQM Datasheet Page 5 TPCC8002-H(TE12LQM Datasheet Page 6 TPCC8002-H(TE12LQM Datasheet Page 7

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPCC8002-H(TE12LQM Datasheet
  • where to find TPCC8002-H(TE12LQM
  • Toshiba Semiconductor and Storage

  • Toshiba Semiconductor and Storage TPCC8002-H(TE12LQM
  • TPCC8002-H(TE12LQM PDF Datasheet
  • TPCC8002-H(TE12LQM Stock

  • TPCC8002-H(TE12LQM Pinout
  • Datasheet TPCC8002-H(TE12LQM
  • TPCC8002-H(TE12LQM Supplier

  • Toshiba Semiconductor and Storage Distributor
  • TPCC8002-H(TE12LQM Price
  • TPCC8002-H(TE12LQM Distributor

TPCC8002-H(TE12LQM Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSV-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs8.3mOhm @ 11A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2500pF @ 10V
FET Feature-
Power Dissipation (Max)700mW (Ta), 30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

The Products You May Be Interested In

DMP1022UFDF-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

-

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

9.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

14.8mOhm @ 4A, 4.5V

Vgs(th) (Max) @ Id

800mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

48.3nC @ 4.5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

2712pF @ 10V

FET Feature

-

Power Dissipation (Max)

730mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

U-DFN2020-6 (Type F)

Package / Case

6-UDFN Exposed Pad

BSS215PH6327XTSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

OptiMOS™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

150mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 11µA

Gate Charge (Qg) (Max) @ Vgs

3.6nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

346pF @ 15V

FET Feature

-

Power Dissipation (Max)

500mW (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

SOT-23-3

Package / Case

TO-236-3, SC-59, SOT-23-3

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

49mOhm @ 50A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

255nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13800pF @ 25V

FET Feature

-

Power Dissipation (Max)

1560W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA

IRFR4105TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

27A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

45mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

34nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

700pF @ 25V

FET Feature

-

Power Dissipation (Max)

68W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

DMN30H4D1S-13

Diodes Incorporated

Manufacturer

Diodes Incorporated

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

Recently Sold

SMBJ14A-13-F

SMBJ14A-13-F

Diodes Incorporated

TVS DIODE 14V 23.2V SMB

ABM3B-25.000MHZ-B2-T

ABM3B-25.000MHZ-B2-T

Abracon

CRYSTAL 25.0000MHZ 18PF SMD

PI3VDP411LSRZBE

PI3VDP411LSRZBE

Diodes Incorporated

IC DEMULTIPLEXER 48TQFN

DS1216C

DS1216C

Maxim Integrated

IC SMART/RAM 5V 64K/256K 28-DIP

ESDR0502NMUTBG

ESDR0502NMUTBG

ON Semiconductor

TVS DIODE 5.5V 6UDFN

74VHC125TTR

74VHC125TTR

STMicroelectronics

IC BUF NON-INVERT 5.5V 14TSSOP

MADL-011021-14150T

MADL-011021-14150T

M/A-Com Technology Solutions

RF DIODE PIN 6TDFN

LT1118CST-2.5#TRPBF

LT1118CST-2.5#TRPBF

Linear Technology/Analog Devices

IC REG LIN 2.5V 800MA SOT223-3

ADM3202ARN

ADM3202ARN

Analog Devices

IC TRANSCEIVER FULL 2/2 16SOIC

ADA4096-2ARMZ

ADA4096-2ARMZ

Analog Devices

IC OPAMP GP 2 CIRCUIT 8MSOP

3224W-1-105E

3224W-1-105E

Bourns

TRIMMER 1M OHM 0.25W J LEAD TOP

CRA2512-FZ-R020ELF

CRA2512-FZ-R020ELF

Bourns

RES 0.02 OHM 1% 3W 2512