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TPCP8003-H(TE85L,F

TPCP8003-H(TE85L,F

For Reference Only

Part Number TPCP8003-H(TE85L,F
PNEDA Part # TPCP8003-H-TE85L-F
Description MOSFET N-CH 100V 2.2A PS-8
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 6,174
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 3 - Jun 8 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPCP8003-H(TE85L Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPCP8003-H(TE85L,F
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TPCP8003-H(TE85L, TPCP8003-H(TE85L Datasheet (Total Pages: 7, Size: 210.63 KB)
PDFTPCP8003-H(TE85L Datasheet Cover
TPCP8003-H(TE85L Datasheet Page 2 TPCP8003-H(TE85L Datasheet Page 3 TPCP8003-H(TE85L Datasheet Page 4 TPCP8003-H(TE85L Datasheet Page 5 TPCP8003-H(TE85L Datasheet Page 6 TPCP8003-H(TE85L Datasheet Page 7

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TPCP8003-H(TE85L Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIII-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 1.1A, 10V
Vgs(th) (Max) @ Id2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs7.5nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds360pF @ 10V
FET Feature-
Power Dissipation (Max)840mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePS-8 (2.9x2.4)
Package / Case8-SMD, Flat Lead

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