Certifications

iso9001
iso14001
icas
Delivery
security
warranty
roiginal
RoHS
UL
Millions of Electronic Parts In Stock. Price & Lead Time Quotes within 24 Hours.

TPH3208LDG

TPH3208LDG

For Reference Only

Part Number TPH3208LDG
PNEDA Part # TPH3208LDG
Description GANFET N-CH 650V 20A PQFN
Manufacturer Transphorm
Unit Price Request a Quote
In Stock 9,528
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 2 - May 7 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPH3208LDG Resources

Brand Transphorm
ECAD Module ECAD
Mfr. Part NumberTPH3208LDG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

Payment Method

TT Unionpay paypal paypalwtcreditcard alipay wu
  • Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
  • If you need the detailed invoice or tax ID,please email us.
  • Some orders may require a minimum amount of $100.00.
  • Cheque or cash on delivery, processing may take an additional 3-5 days.

Logistics Mode

TNT UPS Fedex EMS DHL
  • Delivery time: At the same day (Order deadline is 2pm, HK Time).
  • Delivery date: usually 2 to 7 working days.
  • It is unable to appoint a date of delivery.
  • Tracking number will be sent once your order has been shipped.
  • It may take up to 24 hours before carriers display the info.

Notes

  • Please confirm the specifications of the products when ordering.
  • If you have special order instructions,please note it on the ordering pages.
  • Registered users can log in to the account to view the order status.
  • You can email us to change the order details before shipment.
  • Orders cannot be canceled after shipping the packages.

At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.

Our approach is built around proving our clients with three key advantages:

  • Prompt Responsiveness

    Our team responds quickly to your requests, and gets to work immediately to find your parts.

  • Guaranteed Quality

    Our quality-control processes guard against counterfeits while ensuring reliability and performance.

  • Global Access

    Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.

Hot search vocabulary

  • TPH3208LDG Datasheet
  • where to find TPH3208LDG
  • Transphorm

  • Transphorm TPH3208LDG
  • TPH3208LDG PDF Datasheet
  • TPH3208LDG Stock

  • TPH3208LDG Pinout
  • Datasheet TPH3208LDG
  • TPH3208LDG Supplier

  • Transphorm Distributor
  • TPH3208LDG Price
  • TPH3208LDG Distributor

TPH3208LDG Specifications

ManufacturerTransphorm
Series-
FET TypeN-Channel
TechnologyGaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs130mOhm @ 13A, 8V
Vgs(th) (Max) @ Id2.6V @ 300µA
Gate Charge (Qg) (Max) @ Vgs14nC @ 8V
Vgs (Max)±18V
Input Capacitance (Ciss) (Max) @ Vds760pF @ 400V
FET Feature-
Power Dissipation (Max)96W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-PQFN (8x8)
Package / Case3-PowerDFN

The Products You May Be Interested In

SUM52N20-39P-E3

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

TrenchFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

52A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

Rds On (Max) @ Id, Vgs

38mOhm @ 20A, 15V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 15V

Vgs (Max)

±25V

Input Capacitance (Ciss) (Max) @ Vds

4220pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.12W (Ta), 250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (D2Pak)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRFC4227ED

Infineon Technologies

Manufacturer

Infineon Technologies

Series

*

FET Type

-

Technology

-

Drain to Source Voltage (Vdss)

-

Current - Continuous Drain (Id) @ 25°C

-

Drive Voltage (Max Rds On, Min Rds On)

-

Rds On (Max) @ Id, Vgs

-

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

-

Vgs (Max)

-

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

-

Operating Temperature

-

Mounting Type

-

Supplier Device Package

-

Package / Case

-

2SK4116LS

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

400V

Current - Continuous Drain (Id) @ 25°C

8.9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

540mOhm @ 6A, 10V

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

24.5nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 30V

FET Feature

-

Power Dissipation (Max)

2W (Ta), 33W (Tc)

Operating Temperature

150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220FI(LS)

Package / Case

TO-220-3 Full Pack

IRF3711ZCSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

92A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

24nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2150pF @ 10V

FET Feature

-

Power Dissipation (Max)

79W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AOT15S60L

Alpha & Omega Semiconductor

Manufacturer

Alpha & Omega Semiconductor Inc.

Series

aMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

15A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

290mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

3.8V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15.6nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

372pF @ 100V

FET Feature

-

Power Dissipation (Max)

208W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220

Package / Case

TO-220-3

Recently Sold

LSM9DS1TR

LSM9DS1TR

STMicroelectronics

IMU ACCEL/GYRO/MAG I2C/SPI 24LGA

MAX253CSA+T

MAX253CSA+T

Maxim Integrated

IC DRVR TRANSFORMER 8-SOIC

BAT54-7-F

BAT54-7-F

Diodes Incorporated

DIODE SCHOTTKY 30V 200MA SOT23-3

MBRS340T3G

MBRS340T3G

ON Semiconductor

DIODE SCHOTTKY 40V 4A SMC

BAV99

BAV99

Panasonic Electronic Components

DIODE ARRAY GP 80V 200MA SOT23-3

RJH60D5BDPQ-E0#T2

RJH60D5BDPQ-E0#T2

Renesas Electronics America

IGBT 600V 75A 200W TO-247

D45VH10G

D45VH10G

ON Semiconductor

TRANS PNP 80V 15A TO220AB

BZV49-C18,115

BZV49-C18,115

Nexperia

DIODE ZENER 18V 1W SOT89

MAX9910EXK+T

MAX9910EXK+T

Maxim Integrated

IC OPAMP GP 1 CIRCUIT SC70-5

DG641DY

DG641DY

Vishay Siliconix

IC VIDEO SWITCH SPST 16SOIC

DS1624S+

DS1624S+

Maxim Integrated

SENSOR DIGITAL -55C-125C 8SOIC

SMBJ5.0CA

SMBJ5.0CA

TVS DIODE 5V 9.2V SMB