TPH4R10ANL,L1Q
For Reference Only
| Part Number | TPH4R10ANL,L1Q |
| PNEDA Part # | TPH4R10ANL-L1Q |
| Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 6,444 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 19 - Jun 24 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TPH4R10ANL Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TPH4R10ANL,L1Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TPH4R10ANL,L1Q Datasheet
- where to find TPH4R10ANL,L1Q
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TPH4R10ANL,L1Q
- TPH4R10ANL,L1Q PDF Datasheet
- TPH4R10ANL,L1Q Stock
- TPH4R10ANL,L1Q Pinout
- Datasheet TPH4R10ANL,L1Q
- TPH4R10ANL,L1Q Supplier
- Toshiba Semiconductor and Storage Distributor
- TPH4R10ANL,L1Q Price
- TPH4R10ANL,L1Q Distributor
TPH4R10ANL Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 92A (Ta), 70A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 75nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6.3nF @ 50V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 67W (Tc) |
| Operating Temperature | 150°C |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
The Products You May Be Interested In
|
Manufacturer STMicroelectronics Series MDmesh™ DM2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 365mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 730pF @ 100V FET Feature - Power Dissipation (Max) 110W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 110V Current - Continuous Drain (Id) @ 25°C 12.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 635pF @ 25V FET Feature - Power Dissipation (Max) 31.2W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220F Package / Case TO-220-3 Full Pack, Isolated Tab |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 1.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 175mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 8µA Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 228pF @ 15V FET Feature - Power Dissipation (Max) 560mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT363-6 Package / Case 6-VSSOP, SC-88, SOT-363 |
Manufacturer Infineon Technologies Series HEXFET® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 28.5mOhm @ 21A, 10V Vgs(th) (Max) @ Id 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1690pF @ 25V FET Feature - Power Dissipation (Max) 91W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D-Pak Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Manufacturer ON Semiconductor Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 19.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id, Vgs 230mOhm @ 9.8A, 5V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 120nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V FET Feature - Power Dissipation (Max) 204W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-3P Package / Case TO-3P-3, SC-65-3 |
