TPHR8504PL,L1Q
For Reference Only
| Part Number | TPHR8504PL,L1Q |
| PNEDA Part # | TPHR8504PL-L1Q |
| Description | MOSFET N-CH 40V 150A 8SOP |
| Manufacturer | Toshiba Semiconductor and Storage |
| Unit Price | Request a Quote |
| In Stock | 39,402 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
TPHR8504PL Resources
| Brand | Toshiba Semiconductor and Storage |
| ECAD Module |
|
| Mfr. Part Number | TPHR8504PL,L1Q |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TPHR8504PL,L1Q Datasheet
- where to find TPHR8504PL,L1Q
- Toshiba Semiconductor and Storage
- Toshiba Semiconductor and Storage TPHR8504PL,L1Q
- TPHR8504PL,L1Q PDF Datasheet
- TPHR8504PL,L1Q Stock
- TPHR8504PL,L1Q Pinout
- Datasheet TPHR8504PL,L1Q
- TPHR8504PL,L1Q Supplier
- Toshiba Semiconductor and Storage Distributor
- TPHR8504PL,L1Q Price
- TPHR8504PL,L1Q Distributor
TPHR8504PL Specifications
| Manufacturer | Toshiba Semiconductor and Storage |
| Series | U-MOSIX-H |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 0.85mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 103nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 9600pF @ 20V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 170W (Tc) |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SOP Advance (5x5) |
| Package / Case | 8-PowerVDFN |
The Products You May Be Interested In
|
Manufacturer Diodes Incorporated Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 10.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 12mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25.1nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1415pF @ 15V FET Feature - Power Dissipation (Max) 1.5W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SO Package / Case 8-SOIC (0.154", 3.90mm Width) |
Manufacturer Infineon Technologies Series CoolMOS™ P7 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 750mOhm @ 2.7A, 10V Vgs(th) (Max) @ Id 3.5V @ 140µA Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 460pF @ 500V FET Feature - Power Dissipation (Max) 51W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO251-3 Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
Manufacturer Vishay Siliconix Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 6.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 270pF @ 25V FET Feature - Power Dissipation (Max) 3.7W (Ta), 43W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series SuperFET® II FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 37A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 99mOhm @ 18.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 114nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3465pF @ 380V FET Feature - Power Dissipation (Max) 357W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |
Manufacturer Infineon Technologies Series OptiMOS™ FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 45A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 45A, 10V Vgs(th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) +5V, -16V Input Capacitance (Ciss) (Max) @ Vds 3770pF @ 25V FET Feature - Power Dissipation (Max) 58W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO262-3 Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
