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TPN4R203NC,L1Q

TPN4R203NC,L1Q

For Reference Only

Part Number TPN4R203NC,L1Q
PNEDA Part # TPN4R203NC-L1Q
Description MOSFET N CH 30V 23A 8TSON-ADV
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 3,204
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 16 - May 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPN4R203NC Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPN4R203NC,L1Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TPN4R203NC Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSVIII
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs24nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1370pF @ 15V
FET Feature-
Power Dissipation (Max)700mW (Ta), 22W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-TSON Advance (3.3x3.3)
Package / Case8-PowerVDFN

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