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TPS1101DR

TPS1101DR

For Reference Only

Part Number TPS1101DR
PNEDA Part # TPS1101DR
Description MOSFET P-CH 15V 2.3A 8-SOIC
Manufacturer Texas Instruments
Unit Price Request a Quote
In Stock 8,640
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPS1101DR Resources

Brand Texas Instruments
ECAD Module ECAD
Mfr. Part NumberTPS1101DR
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TPS1101DR Specifications

Manufacturer
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)15V
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.7V, 10V
Rds On (Max) @ Id, Vgs90mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11.25nC @ 10V
Vgs (Max)+2V, -15V
Input Capacitance (Ciss) (Max) @ Vds-
FET Feature-
Power Dissipation (Max)791mW (Ta)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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