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TPW1R005PL,L1Q

TPW1R005PL,L1Q

For Reference Only

Part Number TPW1R005PL,L1Q
PNEDA Part # TPW1R005PL-L1Q
Description X35 PB-F POWER MOSFET TRANSISTOR
Manufacturer Toshiba Semiconductor and Storage
Unit Price Request a Quote
In Stock 8,694
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TPW1R005PL Resources

Brand Toshiba Semiconductor and Storage
ECAD Module ECAD
Mfr. Part NumberTPW1R005PL,L1Q
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TPW1R005PL Specifications

ManufacturerToshiba Semiconductor and Storage
SeriesU-MOSIX-H
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)45V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs122nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds9600pF @ 22.5V
FET Feature-
Power Dissipation (Max)960mW (Ta), 170W (Tc)
Operating Temperature175°C
Mounting TypeSurface Mount
Supplier Device Package8-DSOP Advance
Package / Case8-PowerVDFN

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