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TSM061NA03CV RGG

TSM061NA03CV RGG

For Reference Only

Part Number TSM061NA03CV RGG
PNEDA Part # TSM061NA03CV-RGG
Description MOSFET N-CH 30V 66A 8PDFN
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 4,932
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM061NA03CV RGG Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM061NA03CV RGG
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single

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TSM061NA03CV RGG Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19.3nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1136pF @ 15V
FET Feature-
Power Dissipation (Max)44.6W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-PDFN (3x3)
Package / Case8-PowerWDFN

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