TSM120N10PQ56 RLG
For Reference Only
Part Number | TSM120N10PQ56 RLG |
PNEDA Part # | TSM120N10PQ56-RLG |
Description | MOSFET N-CH 100V 58A 8PDFN |
Manufacturer | Taiwan Semiconductor Corporation |
Unit Price | Request a Quote |
In Stock | 8,550 |
Warehouses | Shipped from Hong Kong SAR |
Estimated Delivery | May 16 - May 21 (Choose Expedited Shipping) |
Guarantee | Up to 1 year [PNEDA-Warranty]* |
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
TSM120N10PQ56 RLG Resources
Brand | Taiwan Semiconductor Corporation |
ECAD Module | |
Mfr. Part Number | TSM120N10PQ56 RLG |
Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Single |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- TSM120N10PQ56 RLG Datasheet
- where to find TSM120N10PQ56 RLG
- Taiwan Semiconductor Corporation
- Taiwan Semiconductor Corporation TSM120N10PQ56 RLG
- TSM120N10PQ56 RLG PDF Datasheet
- TSM120N10PQ56 RLG Stock
- TSM120N10PQ56 RLG Pinout
- Datasheet TSM120N10PQ56 RLG
- TSM120N10PQ56 RLG Supplier
- Taiwan Semiconductor Corporation Distributor
- TSM120N10PQ56 RLG Price
- TSM120N10PQ56 RLG Distributor
TSM120N10PQ56 RLG Specifications
Manufacturer | Taiwan Semiconductor Corporation |
Series | - |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 12mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 145nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3902pF @ 30V |
FET Feature | - |
Power Dissipation (Max) | 36W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PDFN (5x6) |
Package / Case | 8-PowerTDFN |
The Products You May Be Interested In
IXYS Manufacturer IXYS Series TrenchMV™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 76A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 12mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 50µA Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2580pF @ 25V FET Feature - Power Dissipation (Max) 176W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Package / Case TO-220-3 |
Diodes Incorporated Manufacturer Diodes Incorporated Series - FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 8A, 4.5V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 44nC @ 8V Vgs (Max) ±8V Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V FET Feature - Power Dissipation (Max) 740mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package U-DFN1616-6 Package / Case 6-UFDFN Exposed Pad |
Vishay Siliconix Manufacturer Vishay Siliconix Series - FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 5.2A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 800mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V FET Feature - Power Dissipation (Max) 3.1W (Ta), 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package D2PAK Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Infineon Technologies Manufacturer Infineon Technologies Series SIPMOS® FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 660mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 0V, 10V Rds On (Max) @ Id, Vgs 1.8Ohm @ 660mA, 10V Vgs(th) (Max) @ Id 1V @ 400µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 5V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 430pF @ 25V FET Feature Depletion Mode Power Dissipation (Max) 1.8W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SOT223-4 Package / Case TO-261-4, TO-261AA |
STMicroelectronics Manufacturer STMicroelectronics Series MDmesh™ M2 FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 535pF @ 100V FET Feature - Power Dissipation (Max) 25W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220FP Package / Case TO-220-3 Full Pack |