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TSM1NB60SCT A3G

TSM1NB60SCT A3G

For Reference Only

Part Number TSM1NB60SCT A3G
PNEDA Part # TSM1NB60SCT-A3G
Description MOSFET N-CH 600V 500MA TO92
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 3,526
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

TSM1NB60SCT A3G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberTSM1NB60SCT A3G
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
TSM1NB60SCT A3G, TSM1NB60SCT A3G Datasheet (Total Pages: 7, Size: 694.91 KB)
PDFTSM1NB60SCT B0 Datasheet Cover
TSM1NB60SCT B0 Datasheet Page 2 TSM1NB60SCT B0 Datasheet Page 3 TSM1NB60SCT B0 Datasheet Page 4 TSM1NB60SCT B0 Datasheet Page 5 TSM1NB60SCT B0 Datasheet Page 6 TSM1NB60SCT B0 Datasheet Page 7

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TSM1NB60SCT A3G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C500mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6.1nC @ 10V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds138pF @ 25V
FET Feature-
Power Dissipation (Max)2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-92
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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