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UH1BHE3_A/I

UH1BHE3_A/I

For Reference Only

Part Number UH1BHE3_A/I
PNEDA Part # UH1BHE3_A-I
Description DIODE GEN PURP 100V 1A DO214AC
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 2,052
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 11 - Jun 16 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UH1BHE3_A/I Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberUH1BHE3_A/I
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
UH1BHE3_A/I, UH1BHE3_A/I Datasheet (Total Pages: 5, Size: 85.65 KB)
PDFUH1DHE3/61T Datasheet Cover
UH1DHE3/61T Datasheet Page 2 UH1DHE3/61T Datasheet Page 3 UH1DHE3/61T Datasheet Page 4 UH1DHE3/61T Datasheet Page 5

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UH1BHE3_A/I Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesAutomotive, AEC-Q101
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.05V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)25ns
Current - Reverse Leakage @ Vr1µA @ 100V
Capacitance @ Vr, F17pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 175°C

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Voltage - DC Reverse (Vr) (Max)

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Voltage - DC Reverse (Vr) (Max)

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Current - Average Rectified (Io)

100A

Voltage - Forward (Vf) (Max) @ If

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Speed

Standard Recovery >500ns, > 200mA (Io)

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Current - Reverse Leakage @ Vr

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Capacitance @ Vr, F

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Mounting Type

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Current - Average Rectified (Io)

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Voltage - Forward (Vf) (Max) @ If

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Reverse Recovery Time (trr)

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Operating Temperature - Junction

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