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UMH10NTN

UMH10NTN

For Reference Only

Part Number UMH10NTN
PNEDA Part # UMH10NTN
Description TRANS 2NPN PREBIAS 0.15W UMT6
Manufacturer Rohm Semiconductor
Unit Price Request a Quote
In Stock 213,726
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 27 - Jul 2 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UMH10NTN Resources

Brand Rohm Semiconductor
ECAD Module ECAD
Mfr. Part NumberUMH10NTN
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - Arrays, Pre-Biased
Datasheet
UMH10NTN, UMH10NTN Datasheet (Total Pages: 10, Size: 1,178.08 KB)
PDFUMH1NTN Datasheet Cover
UMH1NTN Datasheet Page 2 UMH1NTN Datasheet Page 3 UMH1NTN Datasheet Page 4 UMH1NTN Datasheet Page 5 UMH1NTN Datasheet Page 6 UMH1NTN Datasheet Page 7 UMH1NTN Datasheet Page 8 UMH1NTN Datasheet Page 9 UMH1NTN Datasheet Page 10

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UMH10NTN Specifications

ManufacturerRohm Semiconductor
Series-
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)2.2kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUMT6

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Current - Collector Cutoff (Max)

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DC Current Gain (hFE) (Min) @ Ic, Vce

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Vce Saturation (Max) @ Ib, Ic

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DC Current Gain (hFE) (Min) @ Ic, Vce

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