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UPA1912TE(0)-T1-AT

UPA1912TE(0)-T1-AT

For Reference Only

Part Number UPA1912TE(0)-T1-AT
PNEDA Part # UPA1912TE-0-T1-AT
Description MOSFET P-CH SC-95
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 6,912
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 16 - Jun 21 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA1912TE(0)-T1-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA1912TE(0)-T1-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA1912TE(0)-T1-AT, UPA1912TE(0)-T1-AT Datasheet (Total Pages: 10, Size: 189.7 KB)
PDFUPA1912TE(0)-T1-AT Datasheet Cover
UPA1912TE(0)-T1-AT Datasheet Page 2 UPA1912TE(0)-T1-AT Datasheet Page 3 UPA1912TE(0)-T1-AT Datasheet Page 4 UPA1912TE(0)-T1-AT Datasheet Page 5 UPA1912TE(0)-T1-AT Datasheet Page 6 UPA1912TE(0)-T1-AT Datasheet Page 7 UPA1912TE(0)-T1-AT Datasheet Page 8 UPA1912TE(0)-T1-AT Datasheet Page 9 UPA1912TE(0)-T1-AT Datasheet Page 10

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UPA1912TE(0)-T1-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs50mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs5.6nC @ 4V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds810pF @ 10V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Operating Temperature150°C
Mounting TypeSurface Mount
Supplier Device PackageSC-95
Package / CaseSC-95

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