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UPA2816T1S-E2-AT

UPA2816T1S-E2-AT

For Reference Only

Part Number UPA2816T1S-E2-AT
PNEDA Part # UPA2816T1S-E2-AT
Description MOSFET P-CH 30V 17A 8HWSON
Manufacturer Renesas Electronics America
Unit Price Request a Quote
In Stock 7,380
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 13 - Jun 18 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UPA2816T1S-E2-AT Resources

Brand Renesas Electronics America
ECAD Module ECAD
Mfr. Part NumberUPA2816T1S-E2-AT
CategorySemiconductorsTransistorsTransistors - FETs, MOSFETs - Single
Datasheet
UPA2816T1S-E2-AT, UPA2816T1S-E2-AT Datasheet (Total Pages: 7, Size: 141.88 KB)
PDFUPA2816T1S-E2-AT Datasheet Cover
UPA2816T1S-E2-AT Datasheet Page 2 UPA2816T1S-E2-AT Datasheet Page 3 UPA2816T1S-E2-AT Datasheet Page 4 UPA2816T1S-E2-AT Datasheet Page 5 UPA2816T1S-E2-AT Datasheet Page 6 UPA2816T1S-E2-AT Datasheet Page 7

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UPA2816T1S-E2-AT Specifications

ManufacturerRenesas Electronics America
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15.5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs33.4nC @ 10V
Vgs (Max)+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds1160pF @ 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-HWSON (3.3x3.3)
Package / Case8-PowerWDFN

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