US1GHE3_A/I
For Reference Only
| Part Number | US1GHE3_A/I |
| PNEDA Part # | US1GHE3_A-I |
| Description | DIODE GEN PURP 400V 1A DO214AC |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 283,974 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 3 - May 8 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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US1GHE3_A/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | US1GHE3_A/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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US1GHE3_A/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 400V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 1A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 10µA @ 400V |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Operating Temperature - Junction | -55°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series eSMP®, TMBS® Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 60V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 620mV @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 600µA @ 60V Capacitance @ Vr, F 310pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-219AB Supplier Device Package DO-219AB (SMF) Operating Temperature - Junction -40°C ~ 150°C |
Manufacturer Microsemi Corporation Series * Diode Type - Voltage - DC Reverse (Vr) (Max) - Current - Average Rectified (Io) - Voltage - Forward (Vf) (Max) @ If - Speed - Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr - Capacitance @ Vr, F - Mounting Type - Package / Case - Supplier Device Package - Operating Temperature - Junction - |
