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US1J R3G

US1J R3G

For Reference Only

Part Number US1J R3G
PNEDA Part # US1J-R3G
Description DIODE GEN PURP 600V 1A DO214AC
Manufacturer Taiwan Semiconductor Corporation
Unit Price Request a Quote
In Stock 52,224
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 12 - Jun 17 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

US1J R3G Resources

Brand Taiwan Semiconductor Corporation
ECAD Module ECAD
Mfr. Part NumberUS1J R3G
CategorySemiconductorsDiodes & RectifiersRectifiers - Single

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US1J R3G Specifications

ManufacturerTaiwan Semiconductor Corporation
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)600V
Current - Average Rectified (Io)1A
Voltage - Forward (Vf) (Max) @ If1.7V @ 1A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)75ns
Current - Reverse Leakage @ Vr5µA @ 600V
Capacitance @ Vr, F10pF @ 4V, 1MHz
Mounting TypeSurface Mount
Package / CaseDO-214AC, SMA
Supplier Device PackageDO-214AC (SMA)
Operating Temperature - Junction-55°C ~ 150°C

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