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UTV080

UTV080

For Reference Only

Part Number UTV080
PNEDA Part # UTV080
Description RF TRANS NPN 28V 860MHZ 55JV
Manufacturer Microsemi
Unit Price Request a Quote
In Stock 4,788
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 4 - May 9 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

UTV080 Resources

Brand Microsemi
ECAD Module ECAD
Mfr. Part NumberUTV080
CategorySemiconductorsTransistorsTransistors - Bipolar (BJT) - RF

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UTV080 Specifications

ManufacturerMicrosemi Corporation
Series-
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)28V
Frequency - Transition470MHz ~ 860MHz
Noise Figure (dB Typ @ f)-
Gain9dB ~ 10dB
Power - Max65W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 500mA, 5V
Current - Collector (Ic) (Max)2.5A
Operating Temperature200°C (TJ)
Mounting TypeChannel, DIN Rail Mount
Package / Case55JV
Supplier Device Package55JV

The Products You May Be Interested In

Manufacturer

NXP USA Inc.

Series

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Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

4.5V

Frequency - Transition

21GHz

Noise Figure (dB Typ @ f)

1.2dB ~ 1.8dB @ 900MHz ~ 2GHz

Gain

16dB

Power - Max

360mW

DC Current Gain (hFE) (Min) @ Ic, Vce

40 @ 80mA, 2V

Current - Collector (Ic) (Max)

250mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-82A, SOT-343

Supplier Device Package

CMPAK-4

2SC5227A-5-TB-E

ON Semiconductor

Manufacturer

ON Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

10V

Frequency - Transition

7GHz

Noise Figure (dB Typ @ f)

1dB @ 1GHz

Gain

12dB

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

135 @ 20mA, 5V

Current - Collector (Ic) (Max)

70mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

3-CP

2SC4713KT146S

Rohm Semiconductor

Manufacturer

Rohm Semiconductor

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

800MHz

Noise Figure (dB Typ @ f)

-

Gain

-

Power - Max

200mW

DC Current Gain (hFE) (Min) @ Ic, Vce

180 @ 5mA, 5V

Current - Collector (Ic) (Max)

50mA

Operating Temperature

150°C (TJ)

Mounting Type

Surface Mount

Package / Case

TO-236-3, SC-59, SOT-23-3

Supplier Device Package

SMT3

Manufacturer

NXP USA Inc.

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

6V

Frequency - Transition

14GHz

Noise Figure (dB Typ @ f)

1.1dB @ 2GHz

Gain

18.3dB

Power - Max

210mW

DC Current Gain (hFE) (Min) @ Ic, Vce

60 @ 15mA, 3V

Current - Collector (Ic) (Max)

35mA

Operating Temperature

175°C (TJ)

Mounting Type

Surface Mount

Package / Case

SC-82A, SOT-343

Supplier Device Package

CMPAK-4

MDS400

Microsemi

Manufacturer

Microsemi Corporation

Series

-

Transistor Type

NPN

Voltage - Collector Emitter Breakdown (Max)

55V

Frequency - Transition

1.03GHz ~ 1.09GHz

Noise Figure (dB Typ @ f)

-

Gain

6.5dB

Power - Max

1450W

DC Current Gain (hFE) (Min) @ Ic, Vce

10 @ 1A, 5V

Current - Collector (Ic) (Max)

40A

Operating Temperature

200°C (TJ)

Mounting Type

Chassis Mount

Package / Case

55KT

Supplier Device Package

55KT

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