V12P10HE3/86A
For Reference Only
| Part Number | V12P10HE3/86A |
| PNEDA Part # | V12P10HE3-86A |
| Description | DIODE SCHOTTKY 100V 12A TO277A |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,706 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 22 - Jun 27 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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V12P10HE3/86A Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | V12P10HE3/86A |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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V12P10HE3/86A Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | eSMP®, TMBS® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 12A |
| Voltage - Forward (Vf) (Max) @ If | 700mV @ 12A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 250µA @ 100V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series - Diode Type Standard Voltage - DC Reverse (Vr) (Max) 200V Current - Average Rectified (Io) 1.5A Voltage - Forward (Vf) (Max) @ If 1.3V @ 1.5A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 150ns Current - Reverse Leakage @ Vr 5µA @ 200V Capacitance @ Vr, F 20pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case DO-214AA, SMB Supplier Device Package DO-214AA (SMB) Operating Temperature - Junction -55°C ~ 150°C |
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