V35PWM10-M3/I
For Reference Only
| Part Number | V35PWM10-M3/I |
| PNEDA Part # | V35PWM10-M3-I |
| Description | DIODE SCHOTTKY 100V 35A SLIMDPAK |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 2,358 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 14 - Jun 19 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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V35PWM10-M3/I Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | V35PWM10-M3/I |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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V35PWM10-M3/I Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, eSMP®, TMBS® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 35A |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 35A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 800µA @ 100V |
| Capacitance @ Vr, F | 2500pF @ 4V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | SlimDPAK |
| Operating Temperature - Junction | -40°C ~ 175°C |
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Manufacturer Vishay Semiconductor Diodes Division Series Automotive, AEC-Q101 Diode Type Standard Voltage - DC Reverse (Vr) (Max) 150V Current - Average Rectified (Io) 200mA Voltage - Forward (Vf) (Max) @ If 1.25V @ 200mA Speed Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr) 50ns Current - Reverse Leakage @ Vr 100nA @ 150V Capacitance @ Vr, F 5pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case TO-236-3, SC-59, SOT-23-3 Supplier Device Package SOT-23 Operating Temperature - Junction -55°C ~ 150°C |
Manufacturer Renesas Electronics America Series - Diode Type Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 15A (DC) Voltage - Forward (Vf) (Max) @ If 1.8V @ 15A Speed No Recovery Time > 500mA (Io) Reverse Recovery Time (trr) 0ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220AB-2L Operating Temperature - Junction 150°C (Max) |
