V8PM12-M3/86A
For Reference Only
| Part Number | V8PM12-M3/86A |
| PNEDA Part # | V8PM12-M3-86A |
| Description | DIODE SCHOTTKY 8A 120V TO-277A |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 6,048 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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V8PM12-M3/86A Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | V8PM12-M3/86A |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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V8PM12-M3/86A Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101, eSMP®, TMBS® |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 120V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 840mV @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 300µA @ 120V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Vishay Semiconductor Diodes Division Series SUPERECTIFIER® Diode Type Standard Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) 1.5A Voltage - Forward (Vf) (Max) @ If 1.1V @ 1.5A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) 3.5µs Current - Reverse Leakage @ Vr 5µA @ 100V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case DO-204AC, DO-15, Axial Supplier Device Package DO-204AC (DO-15) Operating Temperature - Junction -65°C ~ 175°C |
Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 10A (DC) Voltage - Forward (Vf) (Max) @ If 0.55V @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 40V Capacitance @ Vr, F 420pF @ 10V, 1MHz Mounting Type Surface Mount Package / Case L-FLAT™ Supplier Device Package L-FLAT™ (4x5.5) Operating Temperature - Junction -40°C ~ 125°C |
