VBT1080C-E3/8W
For Reference Only
| Part Number | VBT1080C-E3/8W |
| PNEDA Part # | VBT1080C-E3-8W |
| Description | DIODE SCHOTTKY 10A 80V TO-263AB |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 4,572 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 18 - Jun 23 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VBT1080C-E3/8W Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | VBT1080C-E3/8W |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Arrays |
| Datasheet |
Payment Method
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
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- Orders cannot be canceled after shipping the packages.
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VBT1080C-E3/8W Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | TMBS® |
| Diode Configuration | 1 Pair Common Cathode |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 80V |
| Current - Average Rectified (Io) (per Diode) | 5A |
| Voltage - Forward (Vf) (Max) @ If | 720mV @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 400µA @ 80V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-263AB |
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Manufacturer STMicroelectronics Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 45V Current - Average Rectified (Io) (per Diode) 15A Voltage - Forward (Vf) (Max) @ If 570mV @ 15A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 200µA @ 45V Operating Temperature - Junction 200°C (Max) Mounting Type Through Hole Package / Case TO-220-3 Full Pack Supplier Device Package TO-220FP |
Manufacturer GeneSiC Semiconductor Series - Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 35V Current - Average Rectified (Io) (per Diode) 400A Voltage - Forward (Vf) (Max) @ If 720mV @ 400A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 1mA @ 35V Operating Temperature - Junction -55°C ~ 150°C Mounting Type Chassis Mount Package / Case Three Tower Supplier Device Package Three Tower |
Manufacturer Diodes Incorporated Series SBR® Diode Configuration 1 Pair Common Cathode Diode Type Super Barrier Voltage - DC Reverse (Vr) (Max) 100V Current - Average Rectified (Io) (per Diode) 10A Voltage - Forward (Vf) (Max) @ If 790mV @ 10A Speed Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 90µA @ 100V Operating Temperature - Junction -65°C ~ 175°C Mounting Type Through Hole Package / Case TO-220-3 Supplier Device Package TO-220AB |
