VS-50WQ10FNHM3
For Reference Only
| Part Number | VS-50WQ10FNHM3 |
| PNEDA Part # | VS-50WQ10FNHM3 |
| Description | DIODE SCHOTTKY 100V 5.5A DPAK |
| Manufacturer | Vishay Semiconductor Diodes Division |
| Unit Price | Request a Quote |
| In Stock | 5,940 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 15 - May 20 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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VS-50WQ10FNHM3 Resources
| Brand | Vishay Semiconductor Diodes Division |
| ECAD Module |
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| Mfr. Part Number | VS-50WQ10FNHM3 |
| Category | Semiconductors › Diodes & Rectifiers › Rectifiers - Single |
| Datasheet |
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- Some orders may require a minimum amount of $100.00.
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Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
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Notes
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VS-50WQ10FNHM3 Specifications
| Manufacturer | Vishay Semiconductor Diodes Division |
| Series | Automotive, AEC-Q101 |
| Diode Type | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Current - Average Rectified (Io) | 5.5A |
| Voltage - Forward (Vf) (Max) @ If | 770mV @ 5A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 1mA @ 100V |
| Capacitance @ Vr, F | 183pF @ 5V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | D-PAK (TO-252AA) |
| Operating Temperature - Junction | -40°C ~ 150°C |
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Manufacturer Toshiba Semiconductor and Storage Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 40V Current - Average Rectified (Io) 1A Voltage - Forward (Vf) (Max) @ If 670mV @ 1A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 20µA @ 40V Capacitance @ Vr, F 74pF @ 0V, 1MHz Mounting Type Surface Mount Package / Case SC-76, SOD-323 Supplier Device Package USC Operating Temperature - Junction 150°C (Max) |
Manufacturer GeneSiC Semiconductor Series - Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 30V Current - Average Rectified (Io) 120A Voltage - Forward (Vf) (Max) @ If 650mV @ 120A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) - Current - Reverse Leakage @ Vr 4mA @ 20V Capacitance @ Vr, F - Mounting Type Chassis Mount Package / Case D-67 Supplier Device Package D-67 Operating Temperature - Junction - |
