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VS-8EWS08STR-M3

VS-8EWS08STR-M3

For Reference Only

Part Number VS-8EWS08STR-M3
PNEDA Part # VS-8EWS08STR-M3
Description DIODE GEN PURP 800V 8A D-PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 16,146
Warehouses Shipped from Hong Kong SAR
Estimated Delivery May 19 - May 24 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-8EWS08STR-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-8EWS08STR-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-8EWS08STR-M3, VS-8EWS08STR-M3 Datasheet (Total Pages: 7, Size: 166.11 KB)
PDFVS-8EWS12STRR-M3 Datasheet Cover
VS-8EWS12STRR-M3 Datasheet Page 2 VS-8EWS12STRR-M3 Datasheet Page 3 VS-8EWS12STRR-M3 Datasheet Page 4 VS-8EWS12STRR-M3 Datasheet Page 5 VS-8EWS12STRR-M3 Datasheet Page 6 VS-8EWS12STRR-M3 Datasheet Page 7

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VS-8EWS08STR-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)800V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If1.1V @ 8A
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr50µA @ 800V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-PAK (TO-252AA)
Operating Temperature - Junction-55°C ~ 150°C

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