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VS-8TQ100S-M3

VS-8TQ100S-M3

For Reference Only

Part Number VS-8TQ100S-M3
PNEDA Part # VS-8TQ100S-M3
Description DIODE SCHOTTKY 100V 8A TO263AB
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 6,156
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 26 - Jul 1 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-8TQ100S-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-8TQ100S-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-8TQ100S-M3, VS-8TQ100S-M3 Datasheet (Total Pages: 8, Size: 189.88 KB)
PDFVS-8TQ080STRR-M3 Datasheet Cover
VS-8TQ080STRR-M3 Datasheet Page 2 VS-8TQ080STRR-M3 Datasheet Page 3 VS-8TQ080STRR-M3 Datasheet Page 4 VS-8TQ080STRR-M3 Datasheet Page 5 VS-8TQ080STRR-M3 Datasheet Page 6 VS-8TQ080STRR-M3 Datasheet Page 7 VS-8TQ080STRR-M3 Datasheet Page 8

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VS-8TQ100S-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
Series-
Diode TypeSchottky
Voltage - DC Reverse (Vr) (Max)100V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If720mV @ 8A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)-
Current - Reverse Leakage @ Vr550µA @ 80V
Capacitance @ Vr, F500pF @ 5V, 1MHz
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263 (D2Pak)
Operating Temperature - Junction-55°C ~ 175°C

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