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VS-HFA06TB120S-M3

VS-HFA06TB120S-M3

For Reference Only

Part Number VS-HFA06TB120S-M3
PNEDA Part # VS-HFA06TB120S-M3
Description DIODE GEN PURP 1.2KV 6A D2PAK
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 20,472
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 24 - Jun 29 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-HFA06TB120S-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-HFA06TB120S-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-HFA06TB120S-M3, VS-HFA06TB120S-M3 Datasheet (Total Pages: 7, Size: 162.78 KB)
PDFVS-HFA06TB120SR-M3 Datasheet Cover
VS-HFA06TB120SR-M3 Datasheet Page 2 VS-HFA06TB120SR-M3 Datasheet Page 3 VS-HFA06TB120SR-M3 Datasheet Page 4 VS-HFA06TB120SR-M3 Datasheet Page 5 VS-HFA06TB120SR-M3 Datasheet Page 6 VS-HFA06TB120SR-M3 Datasheet Page 7

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VS-HFA06TB120S-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesHEXFRED®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)1200V
Current - Average Rectified (Io)6A (DC)
Voltage - Forward (Vf) (Max) @ If3.9V @ 12A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)80ns
Current - Reverse Leakage @ Vr5µA @ 1200V
Capacitance @ Vr, F-
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageTO-263AB (D²PAK)
Operating Temperature - Junction-55°C ~ 150°C

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