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VS-MURB820-1-M3

VS-MURB820-1-M3

For Reference Only

Part Number VS-MURB820-1-M3
PNEDA Part # VS-MURB820-1-M3
Description DIODE GEN PURP 200V 8A TO262AA
Manufacturer Vishay Semiconductor Diodes Division
Unit Price Request a Quote
In Stock 3,456
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 20 - Jun 25 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

VS-MURB820-1-M3 Resources

Brand Vishay Semiconductor Diodes Division
ECAD Module ECAD
Mfr. Part NumberVS-MURB820-1-M3
CategorySemiconductorsDiodes & RectifiersRectifiers - Single
Datasheet
VS-MURB820-1-M3, VS-MURB820-1-M3 Datasheet (Total Pages: 8, Size: 205.96 KB)
PDFVS-MURB820TRR-M3 Datasheet Cover
VS-MURB820TRR-M3 Datasheet Page 2 VS-MURB820TRR-M3 Datasheet Page 3 VS-MURB820TRR-M3 Datasheet Page 4 VS-MURB820TRR-M3 Datasheet Page 5 VS-MURB820TRR-M3 Datasheet Page 6 VS-MURB820TRR-M3 Datasheet Page 7 VS-MURB820TRR-M3 Datasheet Page 8

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VS-MURB820-1-M3 Specifications

ManufacturerVishay Semiconductor Diodes Division
SeriesFRED Pt®
Diode TypeStandard
Voltage - DC Reverse (Vr) (Max)200V
Current - Average Rectified (Io)8A
Voltage - Forward (Vf) (Max) @ If975mV @ 8A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35ns
Current - Reverse Leakage @ Vr5µA @ 200V
Capacitance @ Vr, F-
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device PackageTO-262AA
Operating Temperature - Junction-65°C ~ 175°C

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