VT6M1T2CR
For Reference Only
| Part Number | VT6M1T2CR |
| PNEDA Part # | VT6M1T2CR |
| Description | MOSFET N/P-CH 20V 0.1A VMT6 |
| Manufacturer | Rohm Semiconductor |
| Unit Price | Request a Quote |
| In Stock | 148,140 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | May 4 - May 9 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
|
Free shipping on orders over $100. PNEDA is willing to provide you with better services.
|
|
|
|
|
VT6M1T2CR Resources
| Brand | Rohm Semiconductor |
| ECAD Module |
|
| Mfr. Part Number | VT6M1T2CR |
| Category | Semiconductors › Transistors › Transistors - FETs, MOSFETs - Arrays |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
- Registered users can log in to the account to view the order status.
- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
At PNEDA, we strive to be the industry leader by quickly and reliably supplying high-quality electronic components to our clients.
Our approach is built around proving our clients with three key advantages:
Prompt Responsiveness
Our team responds quickly to your requests, and gets to work immediately to find your parts.
Guaranteed Quality
Our quality-control processes guard against counterfeits while ensuring reliability and performance.
Global Access
Our worldwide network of trusted resources allows us to find and deliver the specific parts you need.
Hot search vocabulary
- VT6M1T2CR Datasheet
- where to find VT6M1T2CR
- Rohm Semiconductor
- Rohm Semiconductor VT6M1T2CR
- VT6M1T2CR PDF Datasheet
- VT6M1T2CR Stock
- VT6M1T2CR Pinout
- Datasheet VT6M1T2CR
- VT6M1T2CR Supplier
- Rohm Semiconductor Distributor
- VT6M1T2CR Price
- VT6M1T2CR Distributor
VT6M1T2CR Specifications
| Manufacturer | Rohm Semiconductor |
| Series | - |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate, 1.2V Drive |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 100mA, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 7.1pF @ 10V |
| Power - Max | 120mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-SMD, Flat Leads |
| Supplier Device Package | VMT6 |
The Products You May Be Interested In
|
Manufacturer Advanced Linear Devices Inc. Series EPAD® FET Type 4 N-Channel, Matched Pair FET Feature Depletion Mode Drain to Source Voltage (Vdss) 10.6V Current - Continuous Drain (Id) @ 25°C 12mA, 3mA Rds On (Max) @ Id, Vgs 540Ohm @ 0V Vgs(th) (Max) @ Id 3.45V @ 1µA Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds 2.5pF @ 5V Power - Max 500mW Operating Temperature 0°C ~ 70°C (TJ) Mounting Type Through Hole Package / Case 16-DIP (0.300", 7.62mm) Supplier Device Package 16-PDIP |
Manufacturer Rohm Semiconductor Series - FET Type 2 P-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 9A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SOP |
Manufacturer NXP USA Inc. Series TrenchMOS™ FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 9.9A Rds On (Max) @ Id, Vgs 19mOhm @ 3.5A, 4.5V Vgs(th) (Max) @ Id 700mV @ 1mA Gate Charge (Qg) (Max) @ Vgs 23.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 1366pF @ 16V Power - Max 3.1W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package 8-TSSOP |
Manufacturer Diodes Incorporated Series - FET Type 2 N-Channel (Dual) FET Feature Standard Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7.6A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs 22mOhm @ 10A, 5V, 8mOhm @ 10A, 5V Vgs(th) (Max) @ Id 2.1V @ 250µA, 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 4.5V, 8nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 481pF @ 15V, 996pF @ 15V Power - Max 1.96W (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-PowerLDFN Supplier Device Package PowerDI3333-8 (Type D) |
Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 3.5A, 2.3A Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V Power - Max 2W Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |
