W632GU8MB12I
For Reference Only
| Part Number | W632GU8MB12I |
| PNEDA Part # | W632GU8MB12I |
| Description | IC DRAM 2G PARALLEL 800MHZ |
| Manufacturer | Winbond Electronics |
| Unit Price | Request a Quote |
| In Stock | 8,658 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 12 - Jun 17 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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W632GU8MB12I Resources
| Brand | Winbond Electronics |
| ECAD Module |
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| Mfr. Part Number | W632GU8MB12I |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
- If you need the detailed invoice or tax ID,please email us.
- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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W632GU8MB12I Specifications
| Manufacturer | Winbond Electronics |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3 |
| Memory Size | 2Gb (128M x 16) |
| Memory Interface | Parallel |
| Clock Frequency | 800MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 20ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 78-VFBGA |
| Supplier Device Package | 78-VFBGA (8x10.5) |
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Manufacturer Maxim Integrated Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 4Mb (512K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 100ns Access Time 100ns Voltage - Supply 3V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Through Hole Package / Case 32-DIP Module (0.600", 15.24mm) Supplier Device Package 32-EDIP |
