W948D2FBJX6E TR
For Reference Only
| Part Number | W948D2FBJX6E TR |
| PNEDA Part # | W948D2FBJX6E-TR |
| Description | IC DRAM 256M PARALLEL 90VFBGA |
| Manufacturer | Winbond Electronics |
| Unit Price | Request a Quote |
| In Stock | 2,880 |
| Warehouses | Shipped from Hong Kong SAR |
| Estimated Delivery | Jun 16 - Jun 21 (Choose Expedited Shipping) |
| Guarantee | Up to 1 year [PNEDA-Warranty]* |
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Free shipping on orders over $100. PNEDA is willing to provide you with better services.
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W948D2FBJX6E TR Resources
| Brand | Winbond Electronics |
| ECAD Module |
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| Mfr. Part Number | W948D2FBJX6E TR |
| Category | Semiconductors › Memory ICs › Memory |
| Datasheet |
Payment Method
- Penda is not limited to cash transfers. Checks and bill transfers are also accepted.
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- Some orders may require a minimum amount of $100.00.
- Cheque or cash on delivery, processing may take an additional 3-5 days.
Logistics Mode
- Delivery time: At the same day (Order deadline is 2pm, HK Time).
- Delivery date: usually 2 to 7 working days.
- It is unable to appoint a date of delivery.
- Tracking number will be sent once your order has been shipped.
- It may take up to 24 hours before carriers display the info.
Notes
- Please confirm the specifications of the products when ordering.
- If you have special order instructions,please note it on the ordering pages.
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- You can email us to change the order details before shipment.
- Orders cannot be canceled after shipping the packages.
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W948D2FBJX6E TR Specifications
| Manufacturer | Winbond Electronics |
| Series | - |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - Mobile LPDDR |
| Memory Size | 256Mb (8M x 32) |
| Memory Interface | Parallel |
| Clock Frequency | 166MHz |
| Write Cycle Time - Word, Page | 15ns |
| Access Time | 5ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-VFBGA (8x13) |
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Manufacturer Series - Memory Type Non-Volatile Memory Format NVSRAM Technology NVSRAM (Non-Volatile SRAM) Memory Size 256Kb (32K x 8) Memory Interface Parallel Clock Frequency - Write Cycle Time - Word, Page 200ns Access Time 200ns Voltage - Supply 4.75V ~ 5.5V Operating Temperature 0°C ~ 70°C (TA) Mounting Type Through Hole Package / Case 28-DIP Module (0.61", 15.49mm) Supplier Device Package 28-DIP Module (18.42x37.72) |
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Manufacturer Micron Technology Inc. Series - Memory Type Volatile Memory Format DRAM Technology SDRAM - DDR Memory Size 512Mb (64M x 8) Memory Interface Parallel Clock Frequency 167MHz Write Cycle Time - Word, Page 15ns Access Time 700ps Voltage - Supply 2.3V ~ 2.7V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package 66-TSOP |
Manufacturer Cypress Semiconductor Corp Series NoBL™ Memory Type Volatile Memory Format SRAM Technology SRAM - Synchronous, SDR Memory Size 4.5Mb (128K x 36) Memory Interface Parallel Clock Frequency 166MHz Write Cycle Time - Word, Page - Access Time 3.5ns Voltage - Supply 3.135V ~ 3.6V Operating Temperature -40°C ~ 85°C (TA) Mounting Type Surface Mount Package / Case 100-LQFP Supplier Device Package 100-TQFP (14x20) |
