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W987D2HBJX6E TR

W987D2HBJX6E TR

For Reference Only

Part Number W987D2HBJX6E TR
PNEDA Part # W987D2HBJX6E-TR
Description IC DRAM 128M PARALLEL 90VFBGA
Manufacturer Winbond Electronics
Unit Price Request a Quote
In Stock 6,930
Warehouses Shipped from Hong Kong SAR
Estimated Delivery Jun 25 - Jun 30 (Choose Expedited Shipping)
Guarantee Up to 1 year [PNEDA-Warranty]*

W987D2HBJX6E TR Resources

Brand Winbond Electronics
ECAD Module ECAD
Mfr. Part NumberW987D2HBJX6E TR
CategorySemiconductorsMemory ICsMemory
Datasheet
W987D2HBJX6E TR, W987D2HBJX6E TR Datasheet (Total Pages: 68, Size: 1,470.3 KB)
PDFW987D2HBJX7E Datasheet Cover
W987D2HBJX7E Datasheet Page 2 W987D2HBJX7E Datasheet Page 3 W987D2HBJX7E Datasheet Page 4 W987D2HBJX7E Datasheet Page 5 W987D2HBJX7E Datasheet Page 6 W987D2HBJX7E Datasheet Page 7 W987D2HBJX7E Datasheet Page 8 W987D2HBJX7E Datasheet Page 9 W987D2HBJX7E Datasheet Page 10 W987D2HBJX7E Datasheet Page 11

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W987D2HBJX6E TR Specifications

ManufacturerWinbond Electronics
Series-
Memory TypeVolatile
Memory FormatDRAM
TechnologySDRAM - Mobile LPSDR
Memory Size128Mb (4M x 32)
Memory InterfaceParallel
Clock Frequency166MHz
Write Cycle Time - Word, Page15ns
Access Time5.4ns
Voltage - Supply1.7V ~ 1.95V
Operating Temperature-25°C ~ 85°C (TC)
Mounting TypeSurface Mount
Package / Case90-TFBGA
Supplier Device Package90-VFBGA (8x13)

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